參數(shù)資料
型號： FFH50US60S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 參考電壓二極管
英文描述： 50A, 600V Stealth⑩ Diode
中文描述： 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
封裝： TO-247, 2 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 126K
代理商： FFH50US60S
2003 Fairchild Semiconductor Corporation
FFH50US60S Rev A3
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25
°
C unless otherwise noted
Off State Characteristics
I
R
Instantaneous Reverse Current
On State Characteristics
V
F
Instantaneous Forward Voltage
Dynamic Characteristics
C
J
Junction Capacitance
Switching Characteristics
t
rr
Reverse Recovery Time
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
R
θ
JA
Thermal Resistance Junction to Ambient TO-247
Device Marking
50US60S
Device
Package
TO-247
Tape Width
N/A
Quantity
30
FFH50US60S
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
R
= 600V
T
C
= 25
°
C
T
C
= 125
°
C
-
-
-
-
100
1
μA
mA
I
F
= 50A
T
C
= 25
°
C
T
C
= 125
°
C
-
-
1.38
1.37
1.54
1.53
V
V
V
R
= 10V, I
F
= 0A
-
110
-
pF
I
F
= 1A, dI
F
/dt = 100A/μs, V
R
= 15V
I
F
= 50A, dI
F
/dt = 100A/μs, V
R
= 15V
I
F
= 50A,
dI
F
/dt = 200A/μs,
V
R
= 390V, T
C
= 25
°
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
47
75
113
9.6
0.9
235
1.5
15
2.3
110
0.8
46
3.1
1000
80
124
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
μC
ns
-
A
μC
ns
-
A
μC
A/μs
t
rr
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during t
b
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
dI
M
/dt
I
F
= 50A,
dI
F
/dt = 200A/μs,
V
R
= 390V,
T
C
= 125
°
C
I
F
= 50A,
dI
F
/dt = 1000A/μs,
V
R
= 390V,
T
C
= 125
°
C
-
-
-
-
0.75
30
°
C/W
°
C/W
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