參數(shù)資料
型號: FFB2907A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: PNP Multi-Chip General Purpose Amplifier
中文描述: 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SC-70, 6 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 62K
代理商: FFB2907A
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
B
Base Cutoff Current
I
CEX
Collector Cutoff Current
I
CBO
Collector Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 50 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 100 kHz
V
EB
= 2.0 V, I
C
= 0,
f = 100 kHz
250
MHz
C
obo
Output Capacitance
6.0
pF
C
ibo
Input Capacitance
12
pF
SWITCHING CHARACTERISTICS
t
on
Turn-on Time
t
d
Delay Time
t
r
Rise Time
t
off
Turn-off Time
t
s
Storage Time
t
f
Fall Time
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA
30
8.0
20
80
60
20
ns
ns
ns
ns
ns
ns
V
CC
= 6.0 V, I
C
= 150 mA
I
B1
= I
B2
= 15 mA
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
I
C
= 10 mA, I
B
= 0
60
V
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 30 V, V
EB
= 0.5 V
V
CE
= 30 V, V
BE
= 0.5 V
V
CB
= 50 V, I
E
= 0
V
CB
= 50 V, I
E
= 0, T
A
= 125
°
C
60
5.0
V
V
nA
nA
μ
A
μ
A
50
50
0.02
20
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 500 mA, V
CE
= 10 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA*
I
C
= 500 mA, I
B
= 50 mA
75
100
100
100
50
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
0.4
1.6
1.3
2.6
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
PNP Multi-Chip General Purpose Amplifier
(continued)
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