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參數資料
| 型號： | FET_TRN |
| 英文描述： | Field Effect Transistor(117.77 k) |
| 中文描述： | 場效應晶體管（117.77十一） |
| 文件頁數： | 11/12頁 |
| 文件大小： | 117K |
| 代理商： | FET_TRN |
Transistor
176
Drain to source voltage V
DSS
(V)
~90
~70
~40
~30
~20
~10
Field Effect Transistor
I
8-pin SOP Type Power MOS FET
On-Resistance
R
DS
(on) (m
)
@V
GS
= 10 V
30
20
μ
PA1710 (P-ch, single)
μ
PA1711 (P-ch, single)
μ
PA1751 (N-ch, dual)
μ
PA1700 (N-ch, single)
μ
PA1702 (N-ch, single)
μ
PA1750 (P-ch, dual)
μ
PA1752 (N-ch, dual)*
μ
PA1701 (N-ch, single)*
*: 2.5 V drive is possible. Otherwise 4 V drive is possible.
30
20
30
–30
–30
–20
30
20
μ
PA1700
μ
PA1701
μ
PA1702
μ
PA1710
μ
PA1711
μ
PA1750
μ
PA1751
μ
PA1752
±
7
±
7
±
8
5
7
3.5
±
±
5
±
5
±
28
±
28
±
32
20
±
28
±
14
±
±
20
±
20
2.0*
1
2.0*
1
2.0*
1
2.0*
1
2.0*
1
2.0*
2
2.0*
2
2.0*
2
10
10
10
–10
–10
–10
10
10
3.5
3.5
4
–2.5
–3.5
–1.8
2.5
2.5
5.0
5.0
6.0
3.0
5.0
2.0
3.0
5.0
4
2.5
4
–4
–4
–4
4
2.5
3.5
3.5
4
–2.5
–3.5
–1.8
2.5
2.5
0.040
0.031
0.018
0.11
0.049
0.125
0.044
0.042
0.050
0.048
0.025
0.16
0.07
0.18
0.064
0.061
Power SOP8
Power SOP8
Power SOP8
Power SOP8
Power SOP8
Power SOP8
Power SOP8
Power SOP8
TYP.
MAX.
MIN.
I
D
(A)
V
GS
(V)
I
D
(A)
V
DS
(V)
Pulse
(A)
DC
(A)
V
DSS
(V)
I
D
|y
fs
|
(S)
R
DS(on)
(
)
Absolute maximum rating
(T
A
= 25
°
C)
Electrical characteristics
(T
A
= 25
°
C)
P
T
T
C
=
25
°
C
(W)
Part
number
Package
Applications
Switching
*1: T
A
= 25
°
C, Mounted on ceramic substrate of 1200 mm
2
×
0.7 mm
*2: T
A
= 25
°
C, 2 circuits, Mounted on ceramic substrate of 2000 mm
2
×
1.1 mm
±
±
I
Power SOP8 series
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