參數(shù)資料
型號(hào): FEDS82V16520A-01
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 262,144-Word 】 32-Bit 】 2-Bank SGRAM
中文描述: 262,144詞】32位】2,銀行SGRAM
文件頁(yè)數(shù): 38/40頁(yè)
文件大小: 1226K
代理商: FEDS82V16520A-01
FEDS82V16520A-01
OKI Semiconductor
MS82V16520A
38/40
REVISION HISTORY
Page
Document
No.
Date
Previous
Edition
Current
Edition
Description
PEDS82V16520A-01
Nov. 2001
Preliminary first edition
Changed the subtitle from “2262,144-Word
×
32-Bit
×
2-Bank SDRAM” to “262,144-Word
×
32-Bit
×
2-Bank SGRAM”.
Changed the table in “PRODUCT FAMILY”
Changed Note 3 to Note 4 and added Note 3.
1
1
4
4
5
5
Added symbol “CKE” in headers “Auto
Refresh Command” and “Self Refresh
Entry/Exit Command”.
Added Section “Write with Auto Precharge
Command (
CS,
CAS,
WE
= “Low”,
RAS
, A9 =
“High”).
Added Sections “Read with Auto Precharge
Command (
CS,
CAS
= “Low”,
RAS
,
WE
, A9 =
“High”) and “Burst Stop Command (
CS
,
WE
=
“Low”,
RAS
,
CAS
= “High”).
Added the contents of Functions “Read with
Auto Precharge” and “Write with Auto
Precharge”.
Partially changed the contents of Column
“Address”.
Current State “Precharging (PRE)” has been
moved to page 9 and changed partially.
Added Current States “Read with Auto Pre-
charge (RAP)” and “Write with Auto Pre-
charge (WAP)”.
6
6
7
7
8
8
8
9
9
9
Partially changed the content of Column
“Address” in Current State “Refreshing
(REF)”.
Partially changed the content of POWER ON
SEQUENCE 4.
Changed the heading from “Burst Read
Termination ---“ to “Burst Write Termination
---“ and partially changed the timing diagram.
Changed the content of Note.
Changed “BL = 2, 4, 8, Full” to “BL = Full” in
two diagrams.
Added Section “AUTO PRECHARGE”.
11
11
15
15
16
16
17
PEDS82V16520A-02
Apr. 26, 2002
17
18
Added Sentences shown with “Caution” in the
Absolute Maximum Ratings section.
Added asterisks “*” in the symbol column in
the table of the Capacitance section and
added the sentence shown with asterisk “*”.
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