參數(shù)資料
型號: FEDS81V26000-01
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 1,114,112-Word X 24-Bit Field Memory
中文描述: 1114112字× 24位場記憶
文件頁數(shù): 11/20頁
文件大?。?/td> 160K
代理商: FEDS81V26000-01
FEDS81V26000-02
OKI Semiconductor
MS81V26000
11/20
New Data Read Access
In order to read out “new data,” i.e., to read out data that has been written in a follow-up manner, read reset must be
input after write address 150 and the difference between the read address and the write address must be 350 or
more but 1,114,111 or less.
Old Data Read Access
In order to read out “old data,” i.e., to read out data that was written prior to the write operation being carried out,
the difference between the read address and the write address must be 0 or more but 30 or less. If the difference
between the read address and the write address is between 31 and 349 or 1,114,112 or more, it is unpredictable
whether the new data is output or whether the old data is output. In this case, however, the write data will be written
normally.
相關(guān)PDF資料
PDF描述
FEDS82V16520A-01 262,144-Word 】 32-Bit 】 2-Bank SGRAM
FEDS82V48540-01 393,216-Word 】 32-Bit 】 4-Bank FIFO-SGRAM
FEP16AT Fast Rectifiers (Glass Passivated)
FEP16DT DIODE SM SCHOT C-2PF SOT-23 SINGLE
FEP16DTA Fast Rectifiers (Glass Passivated)
相關(guān)代理商/技術(shù)參數(shù)
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