參數(shù)資料
型號: FDZ5047N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel Logic Level PowerTrench BGA MOSFET
中文描述: 22 A, 30 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ULTRA THIN, BGA-36
文件頁數(shù): 3/6頁
文件大?。?/td> 211K
代理商: FDZ5047N
FDZ5047N Rev D4 (W)
Typical Characteristics
0
20
40
60
80
100
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
2.5V
3.0V
3.5V
4.5V
V
GS
=10V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
20
40
60
80
100
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.0V
6.0V
3.5V
10V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 22A
V
GS
= 10V
0.000
0.004
0.008
0.012
0.016
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 11 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 10V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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