- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375787 > FDW254PZ (FAIRCHILD SEMICONDUCTOR CORP) P-Channel 1.8V Specified PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDW254PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 9200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 109K |
| 代理商： | FDW254PZ |
FDW254PZ Rev. C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
V
GS
= 0 V,
I
D
= –250
μ
A, Referenced to 25
°
C
V
DS
= –16 V,
V
GS
=
±
8 V,
I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
–11
mV/
°
C
μ
A
μ
A
V
GS
= 0 V
V
DS
= 0 V
–1
±
10
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V,
I
D
= –9.2 A
V
GS
= –2.5 V,
I
D
= –7.9 A
V
GS
= –1.8 V,
I
D
= –6.5 A
V
GS
=–4.5 V, I
D
=–9.2 A, T
J
=125
°
C
V
GS
= –4.5 V,
V
DS
= –5 V
I
D
= –250
μ
A
–0.4
–0.6
2
9
11
14
12
–1.5
V
Gate Threshold Voltage
mV/
°
C
m
12
15
21.5
18
I
D(on)
On–State Drain Current
–50
A
g
FS
Forward Transconductance
V
DS
= –5 V,
I
D
= –9.2 A
54
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
5880
990
560
4.9
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
15
15
210
100
60
7
13
27
27
336
160
96
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –9.2 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
–1.2
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.2 A
(Note 2)
–0.5
35
21
ns
nC
I
F
= –9.2 A,
d
iF
/d
t
= 100 A/μs
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
R
θ
JA
is 96°C/W (steady state) when mounted on a 1 inch
2
copper pad on FR-4.
b)
R
θ
JA
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width <
μ
s, Duty cycle < 2.0%.
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDW254P | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDW256P | 30V P-Channel PowerTrench MOSFET |
| FDW258P | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDW2601NZ_NL | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2601NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDW254PZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| FDW256P | 功能描述:MOSFET TSSOP8 SINGLE PCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW256P_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench MOSFET |
| FDW258P | 功能描述:MOSFET 12V/8V PCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW258P_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。