參數(shù)資料
型號(hào): FDW2502P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: CAP CER 3.3UF 16V 20% X7R 1210
中文描述: 4400 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA
封裝: TSSOP-8
文件頁數(shù): 3/6頁
文件大?。?/td> 451K
代理商: FDW2502P
FDW2502P Rev. C1 (W)
Typical Characteristics
0
10
20
30
0
1
2
3
– V
DS
, DRAIN-SOURCE VOLTAGE (V)
D
,
-4.0V
-3.0V
-2.5V
-2.0V
V
GS
= -4.5V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
0
5
10
-I
D
, DRAIN CURRENT (A)
15
20
25
30
R
D
,
D
V
GS
= -2.5V
-4.0V
-3.5V
-4.5V
-3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -4.4A
V
GS
= - 4.5V
0
0.02
0.04
0.06
0.08
0.1
0.12
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -4.4 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0
1
2
3
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
V
DS
= - 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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