參數(shù)資料
型號(hào): FDU6688
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 84 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝: IPAK-3
文件頁(yè)數(shù): 5/6頁(yè)
文件大?。?/td> 120K
代理商: FDU6688
FDD6688/FDU6688 Rev F(W)
Typical Characteristics
0
2
4
6
8
10
0
20
40
60
80
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
=18A
V
DS
= 10V
20V
15V
0
1000
2000
3000
4000
5000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
100ms
1s
100
μ
s
1ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
C
= 25
o
C
10ms
10s
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 96°C/W
T
C
= 25°C
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
t) = r(t) * R
θ
JA
R
θ
JA
= 96 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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