參數(shù)資料
型號： FDS8936S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 4/8頁
文件大?。?/td> 269K
代理商： FDS8936S
FDS8936S Rev.C
0
5
10
15
20
25
0
5
10
15
Q , GATE CHARGE (nC)
V
G
I = 5.0A
10V
20V
V = 5V
0.1
0.2
0.5
V , DRAI N-SOURCE VOLTAGE (V)
1
2
5
10
20
30
50
0.01
0.1
0.5
1
5
10
20
50
I
D
DC
1s
10s
10ms
100ms
1ms
RDS(ON) LIMIT
V = 10V
SINGLE PULSE
R =See Note1c
T = 25°C
100us
0.01
0.1
0.5
1
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (sec)
P
SINGLE PULSE
R =See Note 1C
T = 25°C
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.5
1
2
5
10
30
50
100
200
500
1000
1500
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
C ss
f = 1 MHz
V = 0V
C ss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Typical Electrical And Thermal Characteristics
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve .
Note: Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change
depending on the circuit board design.
相關(guān)PDF資料
PDF描述
FDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor
FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor
FDS8947A Dual P-Channel Enhancement Mode Field Effect Transistor
FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor
FDS8958 Dual N & P-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS8947A 功能描述:MOSFET SO-8 DUAL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8949 功能描述:MOSFET 40V 6A 29OHM DUAL NCH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8949 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor
FDS8949_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench? MOSFET
FDS8949_F085 功能描述:MOSFET N-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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