參數(shù)資料
型號(hào)： FDS8934
廠商： Fairchild Semiconductor Corporation
英文描述： Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述： 雙P溝道增強(qiáng)型場效應(yīng)晶體管
文件頁數(shù)： 4/8頁
文件大?。?/td> 417K
代理商： FDS8934
FDS8934A Rev.B
0
4
8
12
16
20
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-
G
V = -5V
-10V
-15V
I =-4.0A
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
30
50
0.01
0.03
0.1
0.3
1
5
10
20
50
-
RDS(ON)LMT
D
DC
1s
10s
100ms
10ms
1ms
A
V = -4.5V
SINGLE PULSE
R = 135°C/W
T = 25°C
JA
GS
0
0.01
0.1
1
10
100
300
10
20
30
40
50
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =135°C/W
T = 25°C
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
2000
3000
-V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Typical Electrical Characteristics
(continued)
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 135°C/W
T - T = P * R JA
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
相關(guān)PDF資料
PDF描述
FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor
FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor
FDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor
FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor
FDS8947A Dual P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS8934A 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8935 功能描述:MOSFET -80V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8936 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
FDS8936A 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8936S 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
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