參數(shù)資料
型號(hào): FDS8870_NL
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 18 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, SO-8
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 259K
代理商: FDS8870_NL
F
FDS8870 Rev. A3
www.fairchildsemi.com
3
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 1mH, I
= 29A, V
= 30V, V
= 10V.
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
is guaranteed by design while R
JA
is determined by the user’s board design.
3:
R
is measured with 1.0 in
copper on FR-4 board
4:
FDS8870_NL is lead free product. FDS8870_NL marking will appear on the reel label.
V
DD
= 15V, I
D
= 18A
V
GS
= 10V, R
GS
= 3.3
-
-
-
-
-
-
-
9
48
60
21
-
86
-
-
-
-
122
ns
ns
ns
ns
ns
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 18A
I
SD
= 2.1A
I
SD
= 18A, dI
SD
/dt = 100A/
μ
s
I
SD
= 18A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
37
22
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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