參數(shù)資料
型號: FDS7079ZN3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: TV 29C 29#16 SKT RECP
中文描述: 16 A, 30 V, 0.0075 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: FLMP, SO-8
文件頁數(shù): 3/6頁
文件大小: 183K
代理商: FDS7079ZN3
FDS7079ZN3 Rev C1 (W)
Typical Characteristics
0
10
20
30
40
50
60
0
0.5
-V
DS
, DRAIN TO SO1
1.5
2
-
D
,
V
GS
= -10V
-2.5V
-3.5V
-6.0V
-4.5V
-3.0V
0.8
1.2
1.6
2
2.4
2.8
0
15
45
60
-I
D
, DRAIN 30
R
D
,
D
V
GS
= - 3.0V
-6.0V
-4.5V
-10V
-3.5V
-4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
C)
R
D
,
I
D
= -16A
V
GS
= -10V
0.00
0.01
0.02
0.03
0.04
2
4
8
10
-V
GS
, GATE TO SO6
R
D
,
I
D
= -8.0A
T
A
= 125
o
C
T
A
= 25
o
C
igure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5V
0.001
0.01
0.1
1
10
100
0
0.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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