參數(shù)資料
型號： FDS7066N7
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 23 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： FLMP, SO-8
文件頁數(shù)： 2/7頁
文件大?。?/td> 188K
代理商： FDS7066N7
FDS7066SN3 Rev C2 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
V
GS
= 0 V, I
D
= 1 mA
30
V
Breakdown Voltage Temperature
I
D
= 10 mA, Referenced to 25
°
C
25
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
=
±
16 V, V
DS
= 0 V
500
±
100
μ
A
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 19 A
V
GS
= 4.5 V, I
D
= 17.5 A
V
GS
= 10 V, I
D
= 19 A, T
J
= 125
°
C
V
DS
= 10 V, I
D
= 19 A
1
1.4
3
V
Gate Threshold Voltage
–3
mV/
°
C
4.5
5.0
5.5
6.0
8.0
m
g
FS
Forward Transconductance
98
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
4740
825
300
1.4
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
12
12
85
32
41
10
10
22
22
136
51
57
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 15 V, I
D
= 19 A,
V
GS
= 5.0 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Schottky Diode Forward Current
Drain–Source Schottky Diode
Forward Voltage
t
RR
Reverse Recovery Time
Q
RR
Reverse Recovery Charge
4.3
A
V
SD
V
GS
= 0 V,
I
S
= 4.3 A
(Note 2)
0.4
0.7
V
26.6
28
ns
nC
I
F
= 19 A
diF/dt = 300 A/us
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
40°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS7066N7_04 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDS7066SN3 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7079ZN3 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7082N3 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7088N3 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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