參數(shù)資料
型號： FDS7066ASN3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench SyncFET
中文描述： 19 A, 30 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： FLMP, SO-8
文件頁數(shù)： 5/7頁
文件大?。?/td> 188K
代理商： FDS7066ASN3
FDS7066SN3 Rev C2 (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky diode
in parallel with a MOSFET. Figure 12 shows the reverse
recovery characteristic of the FDS7066SN3.
Figure 12. FDS7066SN3 SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent
size MOSFET produced without SyncFET (FDS7066N3).
Figure 13. Non-SyncFET (FDS7066N3) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 100
o
C
T
A
= 25
o
C
T
A
= 125
o
C
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature
F
0
12.5 nS/div
0
12.5 nS/div
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS7066N3 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7066N7 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7066N7_04 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDS7066SN3 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7079ZN3 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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