參數(shù)資料
型號: FDS6986AS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual Notebook Power Supply N-Channel PowerTrench SyncFET
中文描述: 6.5 A, 30 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 5/10頁
文件大?。?/td> 177K
代理商: FDS6986AS
FDS6986AS Rev A (X)
Typical Characteristics: Q2
0
2
4
6
8
10
0
3
6
9
12
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 7.9A
V
DS
= 10V
15V
20V
0
200
400
600
800
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
10
100
I
D
,
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
100μs
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
F
相關PDF資料
PDF描述
FDS6986S Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩
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相關代理商/技術參數(shù)
參數(shù)描述
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FDS6986S 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6986S 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8
FDS6990 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrenchTM MOSFET
FDS6990A 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube