參數(shù)資料
型號(hào): FDS6984SQ1
廠商: Fairchild Semiconductor Corporation
英文描述: Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩
中文描述: 筆記本電源雙N溝道的PowerTrench式SyncFET⑩
文件頁(yè)數(shù): 8/9頁(yè)
文件大?。?/td> 552K
代理商: FDS6984SQ1
FDS6680S Rev C (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 22
shows the reverse recovery characteristic of the
FDS6984S.
Figure 22. FDS6984S SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
Figure 23. Non-SyncFET (FDS6690A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
125
o
C
25
o
C
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
3
F
10nS/DIV
3
0V
相關(guān)PDF資料
PDF描述
FDS6986AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET
FDS6986S Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩
FDS6990S Dual 30V N-Channel PowerTrench SyncFET
FDS6990 Dual 30V N-Channel PowerTrench SyncFET
FDS6990A Dual N-Channel Logic Level PowerTrenchTM MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6986 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDS6986AS 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6986AS_NBBD005 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6986S 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6986S 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8