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參數(shù)資料
| 型號： | FDS6982S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFet⑩ |
| 中文描述： | 6.3 A, 30 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 256K |
| 代理商： | FDS6982S |
FDS6982S Rev B (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSSF
Gate-Body Leakage, Forward
I
GSSR
Gate-Body Leakage, Reverse V
GS
= -20 V, V
DS
= 0 V
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= 250 uA
I
D
= 1 mA, Referenced to 25
°
C
I
D
= 250 μA, Referenced to 25
°
C
V
DS
= 24 V, V
GS
= 0 V
Q2
Q1
Q2
Q1
Q2
Q1
All
All
30
30
V
Breakdown Voltage
20
26
mV/
°
C
1000
1
100
-100
μ
A
V
GS
= 20 V, V
DS
= 0 V
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 1 mA, Referenced to 25
°
C
I
D
= 250 μA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 8.6 A
V
GS
= 10 V, I
D
= 8.6 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 7.5 A
V
GS
= 10 V, I
D
= 6.3 A
V
GS
= 10 V, I
D
= 6.3 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 5.6 A
V
GS
= 10 V, V
DS
= 5 V
Q2
Q1
Q2
Q1
Q2
1
1
3
3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
-3.5
-5
0.013
0.020
0.017
0.021
0.038
0.028
mV/
°
C
Q1
0.016
0.027
0.021
0.028
0.047
0.035
I
D(on)
On-State Drain Current
Q2
Q1
Q2
Q1
30
20
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 8.6 A
V
DS
= 5 V, I
D
= 6.3 A
38
18
S
Dynamic Characteristics
C
iss
Input Capacitance
Q2
Q1
Q2
Q1
Q2
Q1
2040
815
615
186
216
66
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
pF
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6984AS_NL | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6984AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6984S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6984SQ1 | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6986AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6982S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6982S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6982S_D84Z | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982S_NL | 制造商:Fairchild 功能描述:S08/SCHOTTKY,NCH,30V,500A(LEADFREE) |
| FDS6982S_Q | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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