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參數(shù)資料
| 型號： | FDS6609A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 6300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 646K |
| 代理商： | FDS6609A |
April 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDS6609A Rev B(W)
FDS6609A
P-Channel Logic Level PowerTrench
ò
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor's
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
advanced
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
DC/DC converter
Load switch
Motor Drive
Features
–6.3 A, –30 V. R
DS(ON)
= 0.032
@ V
GS
= -10 V
R
DS(ON)
= 0.05
@ V
GS
= -4.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
–30
±
20
-6.3
-40
2.5
1.2
1.0
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6609A
FDS6609A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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| FDS6644 | 30V N-Channel PowerTrench MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6612A | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6612A | 制造商:Fairchild Semiconductor Corporation 功能描述:SO8 SINGLE NCH :ROHS COMPLIANT |
| FDS6612A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel, Logic-Level, PowerTrench MOSFET |
| FDS6612A_D84Z | 功能描述:MOSFET Single N-Ch LL Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6612A_Q | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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