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參數(shù)資料
| 型號(hào)： | FDS5682 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 7.5 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 388K |
| 代理商： | FDS5682 |
F
FDS5682 Rev. A
www.fairchildsemi.com
2
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Continuous (T
A
= 25
o
C, V
GS
= 4.5V, R
θ
JA
= 50
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
7.5
6.7
A
A
A
Figure 4
94
2.5
20
-55 to 150
E
AS
mJ
W
P
D
mW/
o
C
o
C
T
J
, T
STG
Thermal Characteristics
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
25
50
85
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDS5682
FDS5682
Device
FDS5682
Package
SO-8
SO-8
Reel Size
330mm
330mm
Tape Width
12mm
12mm
Quantity
2500 units
2500 units
FDS5682_NL (Note 4)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
A
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 7.5A, V
GS
= 10V
I
D
= 6.7A, V
GS
= 4.5V
I
D
= 7.5A, V
GS
= 10V,
T
A
= 150
o
C
1
-
-
-
2
V
r
DS(ON)
Drain to Source On Resistance
0.017
0.021
0.021
0.0265
-
0.034
0.040
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
R
G
Gate Resistance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
1650
170
65
3.7
27
15
1.6
4.3
2.7
4.5
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V
I
D
= 7.5A
I
g
= 1.0mA
35
20
2.1
-
-
-
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| FDS5682_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 60V, 7.5A, 21m ohm |
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| FDS5690 | 功能描述:MOSFET SO-8 N-CH 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS5690_NBBM009A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 60V 7A 8SOIC |
| FDS5692Z | 功能描述:MOSFET 50V N-Ch UltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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