參數(shù)資料
型號： FDS5170N7
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 60V N-Channel PowerTrench MOSFET
中文描述： 10.6 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： FLMP, SO-8
文件頁數(shù)： 1/6頁
文件大?。?/td> 201K
代理商： FDS5170N7
May 2003
FDS5170N7
60V N-Channel PowerTrench
MOSFET
2002 Fairchild Semiconductor Corporation
FDS5170N7 Rev C1(W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“l(fā)ow side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
Features
10.6 A, 60 V. R
DS(ON)
= 12 m
@ V
GS
= 10 V
R
DS(ON)
= 15 m
@ V
GS
= 6.0 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching, low gate charge (51nC typical)
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
4
3
2
1
5
6
7
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
60
±
20
10.6
50
3.0
–55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
P
D
T
J
, T
STG
(Note 1a)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS5170N7
FDS5170N7
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關PDF資料
PDF描述
FDS5670 60V N-Channel PowerTrench⑩ MOSFET
FDS5672 N-Channel PowerTrench MOSFET
FDS5680 60V N-Channel PowerTrench⑩ MOSFET
FDS5682 N-Channel PowerTrench MOSFET
FDS5682_NL N-Channel PowerTrench MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
FDS5351 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS5670 功能描述:MOSFET SO-8 N-CH 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS5670 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
FDS5670 制造商:Fairchild Semiconductor Corporation 功能描述:SO8 SINGLE NCH 60V
FDS5672 功能描述:MOSFET 60V 12A 10 OHM NCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*