參數(shù)資料
型號(hào): FDS4685
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: 40V P-Channel PowerTrench MOSFET
中文描述: 8200 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 4/5頁(yè)
文件大小: 506K
代理商: FDS4685
4
www.fairchildsemi.com
FDS4685 Rev. C(W)
F
Typical Characteristics:
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -8.2A
V
DS
= -10V
-20V
-30V
0
500
1000
1500
2000
2500
0
5
10
15
20
25
30
35
40
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
10s
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 125
°
C/W
T
A
= 25
°
C
10ms
1ms
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 125
°
C/W
T
A
= 25
°
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125
°
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
D = 0.5
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
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