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      參數(shù)資料
      型號(hào): FDS4070N7
      廠商: FAIRCHILD SEMICONDUCTOR CORP
      元件分類(lèi): JFETs
      英文描述: 40V N-Channel PowerTrench MOSFET
      中文描述: 15.3 A, 40 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
      封裝: FLMP, SO-8
      文件頁(yè)數(shù): 4/7頁(yè)
      文件大?。?/td> 193K
      代理商: FDS4070N7
      FDS4070N3 Rev B1 (W)
      Typical Characteristics
      0
      10
      20
      30
      40
      50
      60
      0
      0.25
      0.5
      0.75
      1
      1.25
      1.5
      V
      DS
      , DRAIN-SOURCE VOLTAGE (V)
      I
      D
      ,
      5.5V
      5.0V
      V
      GS
      = 10V
      4.5V
      6.0V
      7.0V
      0.6
      1
      1.4
      1.8
      2.2
      2.6
      3
      0
      10
      20
      30
      40
      50
      60
      I
      D
      , DRAIN CURRENT (A)
      R
      D
      ,
      D
      V
      GS
      = 5.0V
      7.0V
      6.0V
      10V
      5.5V
      Figure 1. On-Region Characteristics.
      Figure 2. On-Resistance Variation with
      Drain Current and Gate Voltage.
      0.6
      0.8
      1
      1.2
      1.4
      1.6
      1.8
      -50
      -25
      0
      25
      50
      75
      100
      125
      150
      T
      J
      , JUNCTION TEMPERATURE (
      o
      C)
      R
      D
      ,
      I
      D
      = 15.3A
      V
      GS
      = 10V
      0.003
      0.005
      0.007
      0.009
      0.011
      0.013
      0.015
      4
      5
      6
      7
      8
      9
      10
      V
      GS
      , GATE TO SOURCE VOLTAGE (V)
      R
      D
      ,
      I
      D
      = 7.7A
      T
      A
      = 125
      o
      C
      T
      A
      = 25
      o
      C
      Figure 3. On-Resistance Variation
      withTemperature.
      Figure 4. On-Resistance Variation with
      Gate-to-Source Voltage.
      0
      10
      20
      30
      40
      50
      60
      2.5
      3
      3.5
      4
      4.5
      5
      5.5
      6
      V
      GS
      , GATE TO SOURCE VOLTAGE (V)
      I
      D
      ,
      T
      A
      =125
      o
      C
      25
      o
      C
      -55
      o
      C
      V
      DS
      = 5V
      0.0001
      0.001
      0.01
      0.1
      1
      10
      100
      0
      0.2
      0.4
      0.6
      0.8
      1
      1.2
      V
      SD
      , BODY DIODE FORWARD VOLTAGE (V)
      I
      S
      ,
      T
      A
      = 125
      o
      C
      25
      o
      C
      -55
      o
      C
      V
      GS
      = 0V
      Figure 5. Transfer Characteristics.
      Figure 6. Body Diode Forward Voltage Variation
      with Source Current and Temperature.
      F
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