參數(shù)資料
型號(hào)： FDS3590
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 80V N-Channel PowerTrench MOSFET
中文描述： 6500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOIC-8
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 204K
代理商： FDS3590
FDS3590 Rev B. (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A,Referenced to 25
°
C
I
D
= 250
μ
A
80
V
Breakdown Voltage Temperature
88
mV/
°
C
V
DS
= 64 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= –20 V, V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)n
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A,Referenced to 25
°
C
I
D
= 250
μ
A
2
4
V
Gate Threshold Voltage
–6.0
mV/
°
C
V
GS
= 10 V, I
D
= 6.5 A
V
GS
= 10 V, I
D
= 6.5 A, T
J
= 125
°
C
V
GS
= 6 V,
I
D
= 4.5 A
V
GS
= 10 V,
V
DS
= 5 V
V
GS
= 10 V, I
D
= 6.5 A
0.032
0.061
0.034
0.037
0.086
0.043
I
D(on)
G
FS
On–State Drain Current
Forward Transconductance
25
A
S
25
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1180
171
50
pF
pF
pF
V
DS
= 40 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
11
8
26
12
25
4.5
5.8
20
16
50
25
35
ns
ns
ns
ns
nC
nC
nC
V
DD
= 40 V,
V
GS
= 10 V, R
GEN
= 6
I
D
= 1 A,
V
DS
= 40 V, I
D
= 6.5 A,
V
GS
= 10 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
2.1
1.2
A
V
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.74
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°/W when
mounted on a 0.04
in
pad of 2 oz
copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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