參數(shù)資料
型號(hào)： FDS3570
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 80V N-Channel PowerTrench⑩ MOSFET
中文描述： 9000 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOIC-8
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 250K
代理商： FDS3570
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current
Forward
I
GSSR
Gate-Body Leakage Current
Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
80
V
Breakdown Voltage Temperature
Coefficient
77
mV/
°
C
V
DS
= 64 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
1
μ
A
nA
100
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
2
2.4
-7
4
V
Gate Threshold Voltage
Temperature Coefficient
mV/
°
C
V
GS
= 10 V, I
D
= 9 A
V
GS
= 10 V, I
D
= 9 A, T
J
= 125
°
C
V
GS
= 6 V, I
D
= 8.4 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 7.6 A
0.015
0.027
0.016
0.019
0.038
0.022
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
25
A
S
40
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2750
280
140
pF
pF
pF
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
20
12
60
24
54
9.6
14
32
24
95
38
76
ns
ns
ns
ns
nC
nC
nC
V
DD
= 40 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 40 V, I
D
= 9 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
2.1
1.2
A
V
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
0.72
θ
θ
θ
!
≤
"##
μ
$%&
≤
'#(
)*#
°
&+!
'
)#*
°
&+!
##,
'
)'*
°
&+!
相關(guān)PDF資料
PDF描述
FDS3572 N-Channel PowerTrench MOSFET
FDS3580 CAP CER 33000PF 630V X7R 1210
FDS3590 80V N-Channel PowerTrench MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS3570 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDS3570_00 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET
FDS3570TR 制造商:Fairchild Semiconductor Corporation 功能描述:
FDS3572 功能描述:MOSFET 80V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS3572 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 80V 8.9A SOIC
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