參數(shù)資料
型號(hào): FDR6674A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 11500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-8
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 359K
代理商: FDR6674A
FDR6674A Rev C(W)
Typical Characteristics
0
1
2
3
4
5
0
10
20
30
40
Q
g
, GATE CHARGE (nC)
I
D
= 11.5A
V
DS
= 5V
15V
10V
0
1000
2000
3000
4000
5000
6000
7000
8000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 135°C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDR6674A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-8
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FD-R80 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. ELBOW TYPE 2M FREE 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER
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