參數(shù)資料
型號(hào)： FDPF79N15
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 150V N-Channel MOSFET
中文描述： 79 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 1/10頁(yè)
文件大小： 1259K
代理商： FDPF79N15
2006 Fairchild Semiconductor Corporation
FDP79N15 / FDPF79N15 Rev. A
1
www.fairchildsemi.com
F
May 2006
UniFET
TM
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
79A, 150V, R
DS(on)
= 0.03
Ω
@V
GS
= 10 V
Low gate charge ( typical 56 nC)
Low Crss ( typical 96pF)
Fast switching
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDP79N15
FDPF79N15
Unit
V
DSS
I
D
Drain-Source Voltage
150
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
79
50
79*
50*
A
A
I
DM
Drain Current
(Note 1)
316
316*
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1669
mJ
Avalanche Current
(Note 1)
79
A
Repetitive Avalanche Energy
(Note 1)
46.3
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
463
3.7
31
0.25
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP79N15
FDPF79N15
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
0.27
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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