- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375779 > FDP7030BL (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level PowerTrenchTM MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDP7030BL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 112K |
| 代理商： | FDP7030BL |
October 2003
2003 Fairchild Semiconductor Corporation
FDP7030BL/FDB7030BL Rev D1(W)
FDP7030BL/FDB7030BL
N-Channel Logic Level PowerTrench
ò
MOSFET
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
DS(ON)
and fast switching speed.
Features
60 A, 30 V
R
DS(ON)
= 9 m
@ V
GS
= 10 V
R
DS(ON)
= 12 m
@ V
GS
= 4.5 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
DS(ON)
175
°
C maximum junction temperature rating
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Total Power Dissipation @ T
C
= 25
°
C
Ratings
30
±
20
60
180
60
0.4
–65 to +175
Units
V
V
A
(Note 1)
(Note 1)
W
Derate above 25
°
C
W/
°
C
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
2.5
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDB7030BL
FDB7030BL
FDP7030BL
FDP7030BL
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDP7030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDP7045 | N-Channel Logic Level PowerTrench MOSFET |
| FDB7045L | N-Channel Logic Level PowerTrench MOSFET |
| FDP7045L | N-Channel Logic Level PowerTrench MOSFET |
| FDP75N08_0606 | 75V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDP7030BL | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-220 |
| FDP7030BL_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP7030BLS | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP7030L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP7030L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-220 |
發(fā)布緊急采購，3分鐘左右您將得到回復。