- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375765 > FDP6690S (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench SyncFET PDF資料下載
參數(shù)資料
| 型號： | FDP6690S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 42 A, 30 V, 0.0155 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 88K |
| 代理商： | FDP6690S |
FDP6690S/FDB6690S Rev C (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse, V
DD
= 25 V, I
D
=11A
140
11
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 1mA
30
V
Breakdown Voltage Temperature
I
D
= 10mA, Referenced to 25
°
C
25
mV/
°
C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V, V
DS
= 0 V
V
GS
= 0 V
V
DS
= 0 V
500
100
–100
μA
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 10mA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 21 A
V
GS
= 4.5 V, I
D
= 17 A
V
GS
=10 V, I
D
=21 A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 10 V
V
DS
= 10 V, I
D
= 23 A
I
D
= 1mA
1
2.2
3
V
Gate Threshold Voltage
–4
mV/
°
C
12.0
18.5
18.0
15.5
23.0
22.5
m
I
D(on)
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
On–State Drain Current
60
A
Forward Transconductance
33
S
1238
342
104
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
11
9
23
20
18
37
ns
ns
ns
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
13
11
5
4
23
15
ns
nC
nC
nC
V
DS
= 15 V, I
D
= 21A,
V
GS
= 5 V
Drain–Source Diode Characteristics
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/μs
I
S
= 3.5 A
I
S
= 7 A
(Note 1)
(Note 1)
0.51
0.69
21
25
0.7
V
nS
nC
(Note 2)
Notes:
1.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
2.
See “SyncFET Schottky body diode characteristics” below.
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDB7030BL | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應(yīng)管) |
| FDB7030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDB7042L | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應(yīng)管) |
| FDP7042L | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應(yīng)管) |
| FDB8441 | N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDP6N60ZU | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω |
| FDP6N60ZU_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 600V, 4.5A, 2?? |
| FDP7030 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDP7030BL | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP7030BL | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-220 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。