參數(shù)資料
型號: FDP6676
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel Logic Level PowerTrench MOSFET
中文描述: 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 4/5頁
文件大?。?/td> 82K
代理商: FDP6676
FDP6676/FDB6676 Rev. C(W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
90
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 42 A
V
DS
= 5V
15V
10V
0
1000
2000
3000
4000
5000
6000
7000
0
6
12
18
24
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JC
= 1.6
o
C/W
T
C
= 25
o
C
1s
10s
0
200
400
600
800
1000
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JC
= 1.6°C/W
T
C
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JC
(t) = r(t) + R
θ
JC
R
θ
JC
= 1.6 °C/W
T
J
- T
C
= P * R
θ
JC
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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