參數(shù)資料
型號(hào)： FDP24AN06LA0
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 60V, 36A, 24mohm
中文描述： 36 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 2/11頁(yè)
文件大小： 248K
代理商： FDP24AN06LA0
2004 Fairchild Semiconductor Corporation
FDB24AN06LA0 / FDP24AN06LA0 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 90
μ
H, I
AS
= 28A.
2:
Pulse Width = 100s
Device Marking
FDB24AN06LA0
FDP24AN06LA0
Device
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
FDB24AN06LA0
FDP24AN06LA0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 40A, V
GS
= 10V
I
D
= 36A, V
GS
= 5V
I
D
= 36A, V
GS
= 5V,
T
J
= 175
o
C
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.016
0.020
0.019
0.024
-
0.047
0.056
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
1850
180
75
16
1.8
6.3
4.5
5.0
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V
I
D
= 36A
I
g
= 1.0mA
21
2.4
-
-
-
-
-
-
-
V
DD
= 30V, I
D
= 36A
V
GS
= 5V, R
GS
= 9.1
-
-
-
-
-
-
-
168
-
-
-
-
116
ns
ns
ns
ns
ns
ns
11
101
28
49
-
V
SD
Source to Drain Diode Voltage
I
SD
= 36A
I
SD
= 18A
I
SD
= 36A, dI
SD
/dt = 100A/
μ
s
I
SD
= 36A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
34
30
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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