參數(shù)資料
型號(hào): FDP15N50
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
中文描述: 15 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 194K
代理商: FDP15N50
2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 RevD2
F
Figure 7. Body Diode Forward Voltage vs Body
Diode Current
Figure 8. Maximum Safe Operating Area
Figure 9. Maximum Drain Current vs Case
Temperature
Figure 10. Unclamped Inductive Switching
Capability
Figure 11.
Normalized Transient Thermal Impedance, Junction to Case
Typical Characteristics
0
5
10
15
20
25
30
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
T
J
= 175
o
C
T
J
= 25
o
C
0.1
1.0
10
100
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
1000
OPERATION IN THIS AREA
LIMITED BY R
DS(ON)
T
C
= 25
o
C
1ms
DC
10ms
100μs
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
0
4
8
12
16
25
50
75
100
125
175
150
1
0.01
10
50
0.1
1
50
10
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
J
C
) + T
C
SINGLE PULSE
0.20
0.50
0.10
0.05
0.02
0.01
10
-1
10
-2
相關(guān)PDF資料
PDF描述
FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
FDH20N40 20 AMP MINIATURE POWER RELAY
FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET
FDH27N50 Power Inductor; Inductor Type:Power; Inductance:330uH; Inductance Tolerance:+/- 30 %; Series:CD; DC Resistance Max:1090mohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:0.72A; Leaded Process Compatible:Yes RoHS Compliant: Yes
FDH300 High Conductance Low Leakage Diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDP15N50F102 制造商:Fairchild Semiconductor Corporation 功能描述:
FDP15N65 功能描述:MOSFET SINGLE N-CH 500V .38OHM SMPS PWR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP15N65_0610 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:650V N-Channel MOSFET
FDP15N65_0704 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:650V N-Channel MOSFET
FDP16AN08A0 功能描述:MOSFET 75V 58a 0.016 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube