- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375778 > FDP120AN15A0 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDP120AN15A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 14 A, 150 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 251K |
| 代理商： | FDP120AN15A0 |
2002 Fairchild Semiconductor Corporation
FDP120AN15A0 / FDD120AN15A0 Rev. B
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.1
1
10
100
1
10
100
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
μ
s
1ms
DC
100
μ
s
10ms
1
10
0.01
0.1
1
50
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
5
10
15
20
25
30
3
4
5
6
7
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
5
10
15
20
25
30
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 5V
V
GS
= 10V
V
GS
= 7V
90
100
110
120
130
140
0
3
6
9
12
15
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
V
GS
= 10V
D
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 4A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD120AN15A | N-Channel PowerTrench MOSFET |
| FDD120AN15A0 | N-Channel PowerTrench MOSFET |
| FDP12N50 | N-Channel MOSFET 500V, 11.5A, 0.65ヘ |
| FDP13AN06A | N-Channel PowerTrench MOSFET 60V, 62A, 13.5mз |
| FDB13AN06A0 | N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDP120N10 | 功能描述:MOSFET N Chan 100V 12Mohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP12N35 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:350V N-Channel MOSFET |
| FDP12N50 | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP12N50_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 11.5A, 0.65?? |
| FDP12N50F | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 11.5A, 0.7ヘ |
發(fā)布緊急采購，3分鐘左右您將得到回復。