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參數(shù)資料
| 型號(hào)： | FDJ128N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel 2.5 Vgs Specified PowerTrench MOSFET |
| 中文描述： | 5.5 A, 20 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | FLMP, SC-75, 6 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 174K |
| 代理商： | FDJ128N |
FDJ128N Rev B2 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
V
GS
= 0 V,
I
D
= 250
μ
A,Referenced to 25
°
C
I
D
= 250
μ
A
20
V
Breakdown Voltage Temperature
12
mV/
°
C
V
DS
= 16 V,
V
GS
=
±
12 V, V
DS
= 0 V
V
GS
= 0 V
1
μ
A
nA
±
100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A,Referenced to 25
°
C
V
GS
= 4.5 V, I
D
= 5.5 A
V
GS
= 2.5 V, I
D
= 4.7 A
V
GS
= 4.5 V, I
D
= 5.5,T
J
=125
°
C
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V,
I
D
= 5.5 A
I
D
= 250
μ
A
0.6
1.0
–0.3
1.5
V
Gate Threshold Voltage
mV/
°
C
29
41
38
19
35
51
53
m
A
S
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
8
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
543
125
65
2.0
pF
pF
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
7
5
14
3
5
1.2
1.4
15
11
24
7
8
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V,
V
GS
= 4.5 V, R
GEN
= 6
I
D
= 1 A,
V
DS
= 10 V, I
D
= 5.5 A,
V
GS
= 5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode ForwardVoltage V
GS
= 0 V,
1.3
1.2
A
V
I
S
= 1.3 A
(Note 2)
0.7
t
rr
Q
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
12
3
nS
nC
I
F
= 5.5 A,
d
iF
/d
t
= 100 A/μs
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
77°C/W when mounted
on a 1in
pad of 2 oz
copper.
b)
115°C/W when mounted
on a minimum pad of 2 oz
copper.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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