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參數(shù)資料
| 型號： | FDI42AN15A0 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 35A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 150伏五（巴西）直| 35A條（丁）|對262AA |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 278K |
| 代理商： | FDI42AN15A0 |
2002 Fairchild Semiconductor Corporation
FDP42AN15A0 / FDB42AN15A0 / FDI42AN15A0 Rev. B
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.1
1
10
100
1
10
100
300
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
μ
s
1ms
DC
100
μ
s
10ms
0.001
0.01
t
AV
, TIME IN AVALANCHE (ms)
0.1
1
10
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
1
10
100
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
20
40
60
80
3
4
5
6
7
8
0
20
40
60
80
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
V
GS
= 6V
I
D
, DRAIN CURRENT (A)
D
)
35
40
45
50
0
10
20
30
40
V
GS
= 6V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=12A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
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