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參數(shù)資料
| 型號(hào)： | FDI047AN08A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 75V, 80A, 4.7mз |
| 中文描述： | 80 A, 75 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB |
| 封裝： | TO-262AB, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 606K |
| 代理商： | FDI047AN08A0 |
2004 Fairchild Semiconductor Corporation
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C
F
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench
MOSFET
75V, 80A, 4.7m
Features
r
DS(ON)
= 4.0m
(Typ.), V
GS
= 10V, I
D
= 80A
Q
g
(tot) = 92nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82684
Applications
42V Automotive Load Control
Starter / Alternator Systems
Electronic Power Steering Systems
Electronic Valve Train Systems
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
75
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 144
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 62
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
80
15
A
A
A
Figure 4
475
310
2.0
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220, TO-262, TO-247
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-247 (Note 2)
0.48
62
30
o
C/W
o
C/W
o
C/W
DRAIN
(FLANGE)
SOURDRAIN
GATE
TO-262AB
FDI SERIES
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
D
G
S
SOURCE
DRAIN
GATE
DRAIN
(
FLANGE
)
TO-247
FDH SERIES
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDI047AN08A0_F085 | 功能描述:MOSFET 75V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDI100 | 制造商:DEC 制造商全稱:DEC 功能描述:1 AMP FAST RECOVERY BRIDGE RECTIFIERS |
| FDI101 | 制造商:DEC 制造商全稱:DEC 功能描述:1 AMP FAST RECOVERY BRIDGE RECTIFIERS |
| FDI102 | 制造商:DEC 制造商全稱:DEC 功能描述:1 AMP FAST RECOVERY BRIDGE RECTIFIERS |
| FDI10-250L | 功能描述:端子 12-10AWG .25 F 50 PK RoHS:否 制造商:AVX 產(chǎn)品:Junction Box - Wire to Wire 系列:9826 線規(guī):26-18 接線柱/接頭大小: 絕緣: 顏色:Red 型式:Female 觸點(diǎn)電鍍:Tin over Nickel 觸點(diǎn)材料:Beryllium Copper, Phosphor Bronze 端接類型:Crimp |
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