參數(shù)資料
型號(hào)： FDH44N50
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET
中文描述： 44 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 169K
代理商： FDH44N50
2002 Fairchild Semiconductor Corporation
FDH44N50 Rev. A4, August 2002
F
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25
°
C (unless otherwise noted)
Statics
B
VDSS
Dynamics
g
fs
Q
g(TOT)
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
Avalanche Characteristics
E
AS
I
AR
Avalanche Current
Drain-Source Diode Characteristics
Continuous Source Current
(Body Diode)
Pulsed Source Current
1
(Body Diode)
V
SD
Source to Drain Diode Voltage
t
rr
Reverse Recovery Time
Q
RR
Reverse Recovered Charge
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2:
Starting T
J
= 25
°
C, L = 1.61mH, I
AS
= 44
Device Marking
FDH44N50
Device
FDH44N50
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
Reference to 25
o
C,
ID = 1mA
V
GS
= 10V, I
D
= 22A
V
DS
= V
GS
, I
D
= 250
μA
V
DS
= 500V
V
GS
= 0V
V
GS
= ±20V
500
-
-
V
B
VDSS
/
T
J
Breakdown Voltage Temp. Coefficient
-
0.61
-
V/
°
C
r
DS(ON)
V
GS(th)
Drain to Source On-Resistance
Gate Threshold Voltage
-
2
-
-
-
0.11
3.15
-
-
-
0.12
4
25
250
±100
V
I
DSS
Zero Gate Voltage Drain Current
T
C
= 25
o
C
T
C
= 150
o
C
μ
A
I
GSS
Gate to Source Leakage Current
nA
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain
“
Miller
”
Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 50V, I
D
= 22A
V
GS
= 10V,
V
DS
= 400V,
I
D
= 44A
11
-
-
-
-
-
-
-
-
-
-
-
-
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
90
24
31
16
84
45
79
5335
645
40
108
29
37
-
-
-
-
-
-
-
V
DD
= 250V,
I
D
= 44A,
R
G
= 2.15
,
R
D
= 5.68
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Single Pulse Avalanche Energy
2
1500
-
-
-
-
mJ
A
44
I
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
SD
= 44A
I
SD
= 44A, dI
SD
/dt = 100A/
μ
s
I
SD
= 44A, dI
SD
/dt = 100A/
μ
s
-
-
44
A
I
SM
-
-
176
A
-
-
-
0.900
920
14
1.2
1100
18
V
ns
μ
C
D
G
S
相關(guān)PDF資料
PDF描述
FDH45N50F_0605 500V N-Channel MOSFET, FRFET
FDH45N50F 500V N-Channel MOSFET, FRFET
FDH600 Ultra Fast Diodes
FDLL600 Ultra Fast Diodes
FDLL666 Ultra Fast Diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDH44N50 制造商:Fairchild Semiconductor Corporation 功能描述:Diodes Small signal Package/Case:TO-247
FDH44N50_Q 功能描述:MOSFET Single N-Ch 500V .12Ohm SMPS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDH45N50F 功能描述:MOSFET 500V N-CHANNEL MOSFET FRFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDH45N50F_0605 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET, FRFET
FDH45N50F_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET, FRFET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*