參數(shù)資料
型號： FDH3632
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET
中文描述： 12 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 8/11頁
文件大?。?/td> 310K
代理商： FDH3632
F
2004 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C1
PSPICE Electrical Model
.SUBCKT FDB3632 2 1 3 ;
CA 12 8 1.7e-9
Cb 15 14 2.5e-9
Cin 6 8 6.0e-9
rev May 2002
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 102.5
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 5.61e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 2.7e-9
RLgate 1 9 56.1
RLdrain 2 5 10
RLsource 3 7 27
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 3.8e-3
Rgate 9 20 1.1
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1.0e3
Rsource 8 7 RsourceMOD 2.5e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*350),3))}
.MODEL DbodyMOD D (IS=5.9E-11 N=1.07 RS=2.3e-3 TRS1=3.0e-3 TRS2=1.0e-6
+ CJO=4e-9 M=0.58 TT=4.8e-8 XTI=4.2)
.MODEL DbreakMOD D (RS=0.17 TRS1=3.0e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=15e-10 IS=1.0e-30 N=10 M=0.6)
.MODEL MstroMOD NMOS (VTO=4.1 KP=200 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MmedMOD NMOS (VTO=3.4 KP=10.0 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.1)
.MODEL MweakMOD NMOS (VTO=2.75 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.1e+1 RS=0.1)
.MODEL RbreakMOD RES (TC1=1.0e-3 TC2=-1.7e-6)
.MODEL RdrainMOD RES (TC1=8.5e-3 TC2=2.8e-5)
.MODEL RSLCMOD RES (TC1=2.0e-3 TC2=2.0e-6)
.MODEL RsourceMOD RES (TC1=4e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-4.0e-3 TC2=-1.8e-5)
.MODEL RvtempMOD RES (TC1=-4.4e-3 TC2=2.2e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-2)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.8 VOFF=0.4)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.4 VOFF=-0.8)
.ENDS
Note: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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相關代理商/技術參數(shù)
參數(shù)描述
FDH3632 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 100V, 80A, TO-247
FDH400 功能描述:整流器 High Voltage General Purpose RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
FDH400 制造商:Fairchild Semiconductor Corporation 功能描述:RECT DIODE 0.2A150V DO35; Diode Type:Standard Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:150V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:50ns ;RoHS Compliant: Yes
FDH400 制造商:Fairchild Semiconductor Corporation 功能描述:SIGNAL DIODE 制造商:Fairchild Semiconductor Corporation 功能描述:SMALL SIGNAL DIODE 200V 200mA DO-35
FDH400_97 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage General Purpose Diode
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