參數(shù)資料
型號(hào)： FDH34N40
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 34A, 400V, 0.115 Ohm, N-Channel SMPS Power MOSFET
中文描述： 34 A, 400 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 178K
代理商： FDH34N40
2002 Fairchild Semiconductor Corporation
FDH34N40 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25
°
C (unless otherwise noted)
Statics
B
VDSS
Dynamics
g
fs
Q
g(TOT)
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
Avalanche Characteristics
E
AS
Single Pulse Avalanche Energy (Note 2)
I
AR
Avalanche Current
Drain-Source Diode Characteristics
Continuous Source Current
(Body Diode)
Pulsed Source Current (Note 1)
(Body Diode)
V
SD
Source to Drain Diode Voltage
t
rr
Reverse Recovery Time
Q
RR
Reverse Recovered Charge
Notes:
1:
Repetitive rating; pulse width limited by maximum junction temperature
2:
Starting T
J
= 25
°
C, L = 4mH, I
AS
= 34A
Device Marking
FDH34N40
Device
FDH34N40
Package
TO-247
Reel Size
Tube
Tape Width
-
Quantity
30
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250μA, V
GS
= 0V
V/
°
C Reference to 25
°
C
I
D
= 1mA
V
GS
= 10V, I
D
= 17A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 400V
V
GS
= 0V
V
GS
= ±20V
400
-
-
V
B
VDSS
/
T
J
Breakdown Voltage Temp. Coefficient
-
0.4
-
r
DS(ON)
V
GS(th)
Drain to Source On-Resistance
Gate Threshold Voltage
-
0.106
3.4
-
-
-
0.115
4.0
25
250
±100
V
2.0
-
-
-
I
DSS
Zero Gate Voltage Drain Current
T
C
= 25
o
C
T
C
=150
o
C
μA
I
GSS
Gate to Source Leakage Current
nA
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain
“
Miller
”
Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 50V, I
D
= 17A
V
GS
= 10V
V
DS
= 320V
I
D
= 34A
15
-
-
-
-
-
-
-
-
-
-
-
-
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
57
17
18
16
72
42
58
3370
460
29.5
68
20
22
-
-
-
-
-
-
-
V
DD
= 200V
I
D
= 34A
R
G
= 4.3
R
D
= 5.88
V
DS
= 25V, V
GS
= 0V
f = 1MHz
2312
-
-
-
-
mJ
A
34
I
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
SD
= 34A
I
SD
= 34A, dI
SD
/dt = 100A/μs
I
SD
= 34A, dI
SD
/dt = 100A/μs
-
-
34
A
I
SM
-
-
136
A
-
-
-
0.9
445
7.16
1.2
534
8.6
V
ns
μC
D
G
S
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