參數(shù)資料
型號： FDH27N50
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Power Inductor; Inductor Type:Power; Inductance:330uH; Inductance Tolerance:+/- 30 %; Series:CD; DC Resistance Max:1090mohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:0.72A; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述： 27 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 2/6頁
文件大小： 183K
代理商： FDH27N50
2002 Fairchild Semiconductor Corporation
FDH27N50 Rev. A2
F
Package Marking and Ordering Information
Electrical Characteristics
Tc = 25
°
C (unless otherwise noted)
Statics
B
VDSS
Dynamics
g
fs
Q
g(TOT)
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
Avalanche Characteristics
E
AS
Single Pulse Avalanche Energy (Note 2)
I
AR
Avalanche Current
Drain-Source Diode Characteristics
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Note 1)
(Body Diode)
V
SD
Source to Drain Diode Voltage
t
rr
Reverse Recovery Time
Q
RR
Reverse Recovered Charge
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T
J
= 25
°
C, L = 7mH, I
AS
= 27A
Device Marking
FDH27N50
Device
FDH27N50
Package
TO-247
Reel Size
Tube
Tape Width
-
Quantity
30
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
Reference to 25
o
C
I
D
= 1mA
V
GS
= 10V, I
D
= 13.5A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 500V
V
GS
= 0V
V
GS
= ±30V
500
-
-
V
B
VDSS
/
T
J
Breakdown Voltage Temp. Coefficient
-
0.64
-
V/
°
C
r
DS(ON)
V
GS(th)
Drain to Source On-Resistance
Gate Threshold Voltage
-
0.17
3.3
-
-
-
0.19
4.0
25
250
±100
V
2.0
-
-
-
I
DSS
Zero Gate Voltage Drain Current
T
C
=25
o
C
T
C
= 150
o
C
μ
A
I
GSS
Gate to Source Leakage Current
nA
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain
“
Miller
”
Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 50V, I
D
= 13.5A
V
GS
= 10V
V
DS
= 400V
I
D
= 27A
11
-
-
-
-
-
-
-
-
-
-
-
-
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
56
17
18
14
54
47
54
3550
409
22
67
20
22
-
-
-
-
-
-
-
V
DD
= 250V
I
D
= 27A
R
G
= 4.3
R
D
= 9.3
V
DS
= 25V, V
GS
= 0V
f = 1MHz
2552
-
-
-
-
mJ
A
27
I
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
SD
= 27A
I
SD
= 27A, dI
SD
/dt = 100A/
μ
s
I
SD
= 27A, dI
SD
/dt = 100A/
μ
s
-
-
27
A
I
SM
-
-
108
A
-
-
-
0.89
563
9.2
1.2
714
14
V
ns
μ
C
D
G
S
相關(guān)PDF資料
PDF描述
FDH300 High Conductance Low Leakage Diodes
FDLL333 High Conductance Low Leakage Diodes
FDLL300 High Conductance Low Leakage Diodes
FDH300A High Conductance Low Leakage Diode
FDH333 High Conductance Low Leakage Diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDH300 功能描述:整流器 High Conductance Low Leakage RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
FDH300 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE LOW LEAKAGE DO-35
FDH300_Q 功能描述:整流器 High Conductance Low Leakage RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
FDH300_T50R 功能描述:整流器 High Conductance Low Leakage RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
FDH300A 功能描述:整流器 High Conductance Low Leakage RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*