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參數(shù)資料
| 型號： | FDG6321 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N & P Channel Digital FET |
| 中文描述： | 雙N |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 196K |
| 代理商： | FDG6321 |
FDG6321C Rev. D
Typical Electrical Characteristics: N-Channel
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
0
0.2
0.4
I , DRAIN CURRENT (A)
0.6
0.8
1
1.2
0.5
1
1.5
2
D
V = 2.0V
2.7V
3.0V
4.5V
3.5V
2.5V
R
D
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = 4.5 V
I = 0.5A
R
D
0
0.5
1
1.5
2
2.5
3
0
0.3
0.6
0.9
1.2
1.5
V , DRAIN-SOURCE VOLTAGE (V)
I
D
2.7V
2.5V
V = 4.5V
3.0V
2.0V
1.5V
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.4
0.8
1.2
1.6
2
V , GATE TO SOURCE VOLTAGE (V)
R
D
I = 0.3A
T = 125°C
T = 25°C
A
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 5.0V
T = -55°C
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
I
S
T = 125°C
25°C
-55°C
V = 0V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDG6321C | Tantalum Molded Capacitor; Capacitance: 150uF; Voltage: 6.3V; Packaging: Tape & Reel |
| FDG6322C | Dual N & P Channel Digital FET |
| FDG6323 | Integrated Load Switch |
| FDG6323L | Tantalum Molded Capacitor; Capacitance: 2.2uF; Voltage: 6.3V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel |
| FDG6324L | Integrated Load Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG6321C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDG6321C_Q | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6322C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6322C_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
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