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參數資料
| 型號： | FDG6304 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel, Digital FET |
| 中文描述： | 雙P溝道，數字場效應管 |
| 文件頁數： | 4/8頁 |
| 文件大?。?/td> | 227K |
| 代理商： | FDG6304 |
FDG6304P Rev.E1
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
0
0.4
0.8
1.2
1.6
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-
G
V = -5V
-10V
-15V
I = -0.41A
0.1
0.2
0.5
1
2
5
10
25
40
0.01
0.05
0.1
0.5
1
3
- V , DRAIN-SOURCE VOLTAGE (V)
-
RDSON LMT
D
A
T = 25°C
DC
1s
100ms
10ms
10s
V = -4.5V
SINGLE PULSE
R = 415°C
JA
1ms
0.0001
0.001
0.01
0.1
1
10
100
200
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
T - T = P * R (t)
P(pk)
t
1
t
2
R (t) = r(t) * R
R =415
°C/W
JA
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermalresponse will change depending on the circuit board design.
0.1
0.3
-V , DRAIN TO SOURCE VOLTAGE (V)
1
2
5
10
25
3
5
10
30
80
200
C
C ss
f = 1 MHz
V = 0 V
C ss
C ss
00
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
200
10
20
30
40
50
P
SINGLE PULSE
R =415°C/W
T = 25°C
A
JA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDG6304P | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6304P_D87Z | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6304P_Q | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6304PD87Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 25V V(BR)DSS | TSOP |
| FDG6306P | 功能描述:MOSFET P-Ch PowerTrench Specified 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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