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參數(shù)資料
| 型號： | FDG6303N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel, Digital FET |
| 中文描述： | 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 226K |
| 代理商： | FDG6303N |
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
25
V
Breakdown Voltage Temp. Coefficient
26
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 20 V, V
GS
= 0 V
1
μA
T
J
= 55°C
10
μA
I
GSS
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage Current
V
GS
= 8 V, V
DS
= 0 V
100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
0.65
0.8
1.5
V
Gate Threshold Voltage Temp.Coefficient
-2.6
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 0.5 A
0.34
0.45
T
J
=125°C
0.55
0.77
V
GS
= 2.7 V, I
D
= 0.2 A
V
GS
= 2.7 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 0.5 A
0.44
0.6
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
0.5
A
Forward Transconductance
1.45
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
50
pF
Output Capacitance
28
pF
Reverse Transfer Capacitance
9
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V, R
GEN
= 50
3
6
ns
Turn - On Rise Time
8.5
18
ns
Turn - Off Delay Time
17
30
ns
Turn - Off Fall Time
13
25
ns
Total Gate Charge
V
DS
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V
1.64
2.3
nC
Gate-Source Charge
0.38
nC
Gate-Drain Charge
0.45
nC
I
S
V
SD
Maximum Continuous Source Current
0.25
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.25 A
(Note 2)
0.8
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed
by design while R
CA
is determined by the user's board design. R
θ
JA
= 415
O
C/W on minimum pad mounting on FR-4 board in still air.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDG6303N Rev.E
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG6303N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG6303N_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel, Digital FET |
| FDG6303N_D87Z | 功能描述:MOSFET Dual N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6303N_NL | 制造商:Fairchild 功能描述:DUAL MOSFET 25V/0.5A SC70 (LEAD FREE) |
| FDG6303N_Q | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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