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參數(shù)資料
| 型號(hào)： | FDG6303N_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual N-Channel Digital FET |
| 中文描述： | 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 414K |
| 代理商： | FDG6303N_NL |
FDG6303N Rev.F
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
I
, DRAIN CURRENT (A)
DRAIN-SOURCE
ON-RESISTANCE
V
= 2.0V
GS
2.7V
3.0V
4.5V
D
3.5V
2.5V
R
,
NORMALIZED
DS(ON)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE
ON-RESISTANCE
J
V
= 4.5 V
GS
I = 0.5A
D
R
,
NORMALIZED
DS(ON)
0
0.5
1
1.5
2
2.5
3
0
0.3
0.6
0.9
1.2
1.5
V
, DRAIN-SOURCE VOLTAGE (V)
I
,
DRAIN-SOURCE
CURRENT
(A)
2.7V
2.5V
V
= 4.5V
GS
2.0V
1.5V
DS
D
3.0V
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.4
0.8
1.2
1.6
2
V
, GATE TO SOURCE VOLTAGE (V)
R
,
ON-RESISTANCE
(OHM)
DS(on)
GS
I = 0.3A
D
T = 125°C
A
T = 25°C
A
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
V
, GATE TO SOURCE VOLTAGE (V)
I
,
DRAIN
CURRENT
(A)
25°C
125°C
V
= 5.0V
DS
GS
D
T = -55°C
J
0
0.2
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
V
, BODY DIODE FORWARD VOLTAGE (V)
I
,
REVERSE
DRAIN
CURRENT
(A)
T = 125°C
J
25°C
-55°C
V
= 0V
GS
SD
S
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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