參數(shù)資料
型號： FDG326P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： CAP CER 220PF 630VDC U2J 1206
中文描述： 1500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SC-70, 6 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 69K
代理商： FDG326P
FDG326P Rev D(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–20
V
Breakdown Voltage Temperature
–12
mV/
°
C
V
DS
= –16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= –8 V, V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–0.4
–0.9
2
–1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= –4.5 V, I
D
= –1.5 A
V
GS
= –2.5 V, I
D
= –1.3 A
V
GS
= –1.8 V, I
D
= –0.8 A
V
GS
= –4.5 V, I
D
= –1.5 A, T
J
= 125°C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V, I
D
= –1.5 A
105
140
210
125
140
180
250
200
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–6
A
S
5.3
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
467
85
38
pF
pF
pF
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
8
13
18
8
4.4
1.0
0.8
16
23
32
16
7
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V, I
D
= 1 A,
V
GS
= –4.5 V, R
GEN
= 6
V
DS
= –10 V, I
D
= –1.5 A,
V
GS
= –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–0.62
–1.2
A
V
V
GS
= 0 V,
I
S
= –0.62 A
(Note 2)
–0.75
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a.) 170°C/W when mounted on a 1 in
2
pad of 2 oz. copper.
b.) 260°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關代理商/技術參數(shù)
參數(shù)描述
FDG326P_Q 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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