參數(shù)資料
型號： FDG316P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： CAP CER 1000PF 630VDC U2J 1206
中文描述： 1600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SC-70, 6 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 70K
代理商： FDG316P
F
FDG316P Rev.
D
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 170
°
C/W when mounted on a 1 in
2
pad of 2oz copper.
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-30
V
-34
mV/
°
C
V
DS
= -24 V, V
GS
= 0 V
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
-1
100
-100
μ
A
nA
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-1
-1.6
3.5
-3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= -10 V, I
D
= -1.6 A
V
GS
= -10 V, I
D
= -1.6 A,T
J
=125
°
C
V
GS
= -4.5 V, I
D
= -1.3 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -0.5 A
0.16
0.22
0.23
0.19
0.31
0.30
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-3
A
S
3
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
165
60
25
pF
pF
pF
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
8
9
14
2
3.5
0.6
0.8
20
20
30
10
5
ns
ns
ns
ns
nC
nC
nC
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
V
DS
= -15 V, I
D
= -1.6 A,
V
GS
= -10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
-0.42
-1.2
A
V
V
GS
= 0 V, I
S
= -0.42 A
(Note 2)
0.75
b) 260
°
C/W when mounted on a minimum pad.
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