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參數(shù)資料
| 型號： | FDDL333 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | High Conductance Low Leakage Diode |
| 中文描述： | 高導低泄漏二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 26K |
| 代理商： | FDDL333 |
FDH/FDLL 300/A / 333
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
125
200
500
600
V
mA
mA
mA
1.0
4.0
A
A
°
C
°
C
T
stg
T
J
-65 to +200
175
Symbol
Characteristic
Max
Units
FDH/FDLL 300/A / 333
500
3.33
300
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
R
θ
JA
COLOR BAND MARKING
DEVICE
FDLL300
FDLL300A
1ST BAND
BROWN
BROWN
2ND BAND
GREEN
YELLOW
FDLL333
BROWN
BLUE
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
F
Discrete POWE R & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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