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參數資料
| 型號： | FDD8796 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 25V, 35A, 5.7mOhm |
| 中文描述： | 35 A, 25 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 310K |
| 代理商： | FDD8796 |
F
FDD8796/FDU8796 Rev. B
3
www.fairchildsemi.com
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
0
1
2
3
4
0
10
20
30
40
50
60
70
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 3V
V
GS
= 4.5V
V
GS
= 10V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
Current and Gate Voltage
0
10
20
I
D
, DRAIN CURRENT(A)
30
40
50
60
70
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 3V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
V
GS
=
10V
V
GS
= 4.5V
V
GS
= 3.5V
On-Resistance vs Drain
Figure 3.
-80
-40
T
J
, JUNCTION TEMPERATURE
(
o
C
)
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 35A
V
GS
= 10V
Normalized On Resistance vs Junction
Temperature
Figure 4.
2
4
6
8
10
2
4
6
8
10
12
14
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 175
o
C
T
J
= 25
o
C
I
D
=35A
r
D
,
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
0
1
2
3
4
0
10
20
30
40
50
60
70
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.3
0.6
0.9
1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
Voltage vs Source Current
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