參數(shù)資料
型號(hào)： FDD8782
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET
中文描述： 35 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, DPAK-3
文件頁(yè)數(shù)： 3/6頁(yè)
文件大小： 316K
代理商： FDD8782
F
FDD8782/FDU8782 Rev. A
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
0
1
2
3
4
0
10
20
30
40
50
60
70
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
=
3V
V
GS
=
3.5V
V
GS
=
4.5V
V
GS
=
10V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
Current and Gate Voltage
0
10
20
30
40
50
60
70
0
1
2
3
4
5
6
7
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
=
10V
V
GS
=
4.5V
V
GS
= 3.5V
V
GS
= 3V
On-Resistance vs Drain
Figure 3.
-80
-40
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 35A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Normalized On Resistance vs Junction
Temperature
Figure 4.
2
4
6
8
10
0
10
20
30
40
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 175
o
C
T
J
= 25
o
C
I
D
= 15A
r
D
,
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
50
60
70
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
1.4
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0V
I
S
,
Source to Drain Diode Forward
Voltage vs Source Current
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