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參數(shù)資料
| 型號(hào)： | FDD8778 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 25V, 35A, 14mohm |
| 中文描述： | 35 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 361K |
| 代理商： | FDD8778 |
F
FDD8778/FDU8778 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 250
μ
A, referenced to
25°C
25
V
17.2
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 20V,
V
GS
= 0V
V
GS
= ±20V
1
μ
A
T
J
= 150
°
C
250
±10
I
GSS
Gate to Source Leakage Current
μ
A
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 250
μ
A, referenced to
25°C
V
GS
= 10V, I
D
= 35A
V
GS
= 4.5V, I
D
= 33A
V
GS
= 10V, I
D
= 35A
T
J
= 175°C
1.2
1.5
2.5
V
-5.3
mV/°C
r
DS(on)
Drain to Source On Resistance
11.6
15.7
14.0
21.0
m
18.2
23.8
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 13V, V
GS
= 0V,
f = 1MHz
635
160
108
1.3
845
215
162
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(5)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V
DD
= 13V, I
D
= 35A
V
GS
= 10V, R
GS
= 27
6
12
35
69
51
18
9.4
ns
ns
ns
ns
nC
nC
nC
nC
22
43
32
12.6
6.7
2.1
3.2
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 13V
I
D
= 35A
I
g
= 1.0mA
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0V, I
S
= 35A
V
GS
= 0V, I
S
= 15A
I
F
= 35A, di/dt = 100A/
μ
s
I
F
= 35A, di/dt = 100A/
μ
s
1.03
0.89
25
17
1.25
1.2
38
26
V
t
rr
Q
rr
Notes:
1:
Pulse time < 30
0
μ
s, Duty cycle = 2%.
2:
Starting T
J
= 25
o
C, L = 0.1mH, I
AS
= 22A ,V
DD
= 23V, V
GS
= 10V.
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
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